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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . BLOCK DIAGRAM Vd1 Vd2 Vd3 FEATURES In RF frequency : 37.0 to 40.0 GHz Super Low Noise NF=3.5dB (TYP.) Out PHOTOGRAPH ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Vd Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 3 30 Unit V mA V dBm C TBD TBD Limits TARGET SPECIFICATIONS (Ta=25C) Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Operating frequency range Small signal gain Small signal gain flatness Noise figure Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias voltage Drain bias current Gate bias voltage Freq=30GHz Vd=2V,Id=20mA On-wafer measurement 37.0 17.0 18.0 1.5 3.5 2.0:1 2.0:1 (5) TBD (17) TBD 2.5 30 No need dBm dBm V mA V as of July '98 40.0 Test conditions Min. Typ. Max. Unit GHz dB dB dB MITSUBISHI ELECTRIC PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : m) 2190 1850 1550 1050 550 Vd1 Vd2 Vd3 GND GND RF-out GND GND RF-in GND 110 2300 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 2.5 V, Id = 30 mA, Ta = 25 C ) 25 20 15 10 VSWR out 5 VSWR in 0 36 37 38 39 40 Frequency [GHz] 41 0 2 NF 10 8 6 4 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5110 Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT Cb Cb Cb :Chip capacitor (39pF) Cb > 100F Vd1 Vd2 Vd3 GND GND RF-in GND GND RF-out GND *1 *2 *1 Length of bonding wire < 200 m *2 Number of bonding wire 3 *1 *2 MITSUBISHI ELECTRIC as of July '98 |
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